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HFA3046, HFA3096, HFA3127, HFA3128
Data Sheet October 1998 File Number 3076.10
Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPNPNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. For PSPICE models, please request AnswerFAX document number 663046. Intersil also provides an Application Note illustrating the use of these devices as RF amplifiers (request AnswerFAX document 99315).
Features
* NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130 * NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V * PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz * PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 60 * PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V * Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB * Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA * Complete Isolation Between Transistors * Pin Compatible with Industry Standard 3XXX Series Arrays
Applications
* VHF/UHF Amplifiers * VHF/UHF Mixers * IF Converters * Synchronous Detectors
Ordering Information
PART NUMBER HFA3046B HFA3096B HFA3127B HFA3128B TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 -55 to 125 PACKAGE 14 Ld SOIC 16 Ld SOIC 16 Ld SOIC 16 Ld SOIC PKG. NO. M14.15 M16.15 M16.15 M16.15
Pinouts
HFA3046 TOP VIEW
1 2 3 4 5 6 7 Q3 Q2 Q1 Q5 14 13 12 11 5 Q4 10 9 8 6 7 8 Q3 1 2 3 4 Q2 Q4 Q1 Q5
HFA3096 TOP VIEW
16 NC 15 14 13 12 11 10 9 1 2 3 4 NC 5 6 7 8
HFA3127 TOP VIEW
16 Q1 15 14 Q2 Q5 13 12 11 10 Q3 Q4 9 1 2 3 4 NC 5 6 7 8
HFA3128 TOP VIEW
16 Q1 15 14 Q2 Q5 13 12 11 10 Q3 Q4 9
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = 150oC 34mA at TJ = 125oC 37mA at TJ = 110oC Peak Collector Current (Any Condition) . . . . . . . . . . . . . . . . . . 65mA
Thermal Information
Thermal Resistance (Typical, Note 1) JA (oC/W) 14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 120 16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . 115 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only)
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25oC DIE SOIC MAX MIN TYP MAX UNITS
PARAMETER DC NPN CHARACTERISTICS Collector-to-Base Breakdown Voltage, V(BR)CBO Collector-to-Emitter Breakdown Voltage, V(BR)CEO Collector-to-Emitter Breakdown Voltage, V(BR)CES Emitter-to-Base Breakdown Voltage, V(BR)EBO Collector-Cutoff-Current, ICEO Collector-Cutoff-Current, ICBO Collector-to-Emitter Saturation Voltage, VCE(SAT) Base-to-Emitter Voltage, VBE DC Forward-Current Transfer Ratio, hFE Early Voltage, VA Base-to-Emitter Voltage Drift Collector-to-Collector Leakage
TEST CONDITIONS
MIN
TYP
IC = 100A, IE = 0 IC = 100A, IB = 0 IC = 100A, Base Shorted to Emitter IE = 10A, IC = 0 VCE = 6V, IB = 0 VCB = 8V, IE = 0 IC = 10mA, IB = 1mA IC = 10mA IC = 10mA VCE = 2V IC = 1mA, VCE = 3.5V IC = 10mA
12 8 10 5.5 40 20 -
18 12 20 6 2 0.1 0.3 0.85 130 50 -1.5 1
100 10 0.5 0.95 -
12 8 10 5.5 40 20 -
18 12 20 6 2 0.1 0.3 0.85 130 50 -1.5 1
100 10 0.5 0.95 -
V V V V nA nA V V
V mV/oC pA
Electrical Specifications
TA = 25oC DIE SOIC MAX MIN TYP MAX UNITS
PARAMETER DYNAMIC NPN CHARACTERISTICS Noise Figure fT Current Gain-Bandwidth Product Power Gain-Bandwidth Product, fMAX
TEST CONDITIONS
MIN
TYP
f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50 IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V
-
3.5 5.5 8 6
-
-
3.5 5.5 8 2.5
-
dB GHz GHz GHz
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HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25oC (Continued) DIE PARAMETER Base-to-Emitter Capacitance Collector-to-Base Capacitance TEST CONDITIONS VBE = -3V VCB = 3V TA = 25oC DIE PARAMETER DC PNP CHARACTERISTICS Collector-to-Base Breakdown Voltage, V(BR)CBO Collector-to-Emitter Breakdown Voltage, V(BR)CEO Collector-to-Emitter Breakdown Voltage, V(BR)CES Emitter-to-Base Breakdown Voltage, V(BR)EBO Collector-Cutoff-Current, ICEO Collector-Cutoff-Current, ICBO Collector-to-Emitter Saturation Voltage, VCE(SAT) Base-to-Emitter Voltage, VBE DC Forward-Current Transfer Ratio, hFE Early Voltage, VA Base-to-Emitter Voltage Drift Collector-to-Collector Leakage IC = -100A, IE = 0 IC = -100A, IB = 0 IC = -100A, Base Shorted to Emitter IE = -10A, IC = 0 VCE = -6V, IB = 0 VCB = -8V, IE = 0 IC = -10mA, IB = -1mA IC = -10mA IC = -10mA, VCE = -2V IC = -1mA, VCE = -3.5V IC = -10mA 10 8 10 4.5 20 10 TA = 25oC DIE PARAMETER DYNAMIC PNP CHARACTERISTICS Noise Figure fT Current Gain-Bandwidth Product Power Gain-Bandwidth Product Base-to-Emitter Capacitance Collector-to-Base Capacitance f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50 IC = -1mA, VCE = -5V IC = -10mA, VCE = -5V IC = -10mA, VCE = -5V VBE = 3V VCB = -3V 3.5 2 5.5 3 200 300 3.5 2 5.5 2 500 600 dB GHz GHz GHz fF fF TEST CONDITIONS MIN TYP MAX MIN SOIC TYP MAX UNITS 15 15 15 5 2 0.1 0.3 0.85 60 20 -1.5 1 100 10 0.5 0.95 10 8 10 4.5 20 10 15 15 15 5 2 0.1 0.3 0.85 60 20 -1.5 1 100 10 0.5 0.95 V mV/oC pA V V V V nA nA V V TEST CONDITIONS MIN TYP MAX MIN SOIC TYP MAX UNITS MIN TYP 200 200 MAX MIN SOIC TYP 500 500 MAX UNITS fF fF
Electrical Specifications
Electrical Specifications
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HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25oC DIE PARAMETER TEST CONDITIONS MIN TYP MAX MIN SOIC TYP MAX UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage Input Offset Current Input Offset Voltage TC IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V 1.5 5 0.5 5.0 25 1.5 5 0.5 5.0 25 mV A V/oC
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation's web site.
Common Emitter S-Parameters of NPN 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 0.83 0.79 0.73 0.67 0.61 0.55 0.50 0.46 0.42 0.39 0.36 0.34 0.32 0.30 0.28 0.27 0.25 0.24 0.23 0.22 0.21 0.20 0.20 0.19 0.18 0.18 0.17 0.17 0.16 0.16 -11.78 -22.82 -32.64 -41.08 -48.23 -54.27 -59.41 -63.81 -67.63 -70.98 -73.95 -76.62 -79.04 -81.25 -83.28 -85.17 -86.92 -88.57 -90.12 -91.59 -92.98 -94.30 -95.57 -96.78 -97.93 -99.05 -100.12 -101.15 -102.15 -103.11 11.07 10.51 9.75 8.91 8.10 7.35 6.69 6.11 5.61 5.17 4.79 4.45 4.15 3.89 3.66 3.45 3.27 3.10 2.94 2.80 2.68 2.56 2.45 2.35 2.26 2.18 2.10 2.02 1.96 1.89 168.57 157.89 148.44 140.36 133.56 127.88 123.10 119.04 115.57 112.55 109.91 107.57 105.47 103.57 101.84 100.26 98.79 97.43 96.15 94.95 93.81 92.73 91.70 90.72 89.78 88.87 88.00 87.15 86.33 85.54 1.41E-02 2.69E-02 3.75E-02 4.57E-02 5.19E-02 5.65E-02 6.00E-02 6.27E-02 6.47E-02 6.63E-02 6.75E-02 6.85E-02 6.93E-02 7.00E-02 7.05E-02 7.10E-02 7.13E-02 7.17E-02 7.19E-02 7.21E-02 7.23E-02 7.25E-02 7.27E-02 7.28E-02 7.29E-02 7.30E-02 7.31E-02 7.31E-02 7.32E-02 7.32E-02 78.88 68.63 59.58 51.90 45.50 40.21 35.82 32.15 29.07 26.45 24.19 22.24 20.53 19.02 17.69 16.49 15.41 14.43 13.54 12.73 11.98 11.29 10.64 10.05 9.49 8.96 8.47 8.01 7.57 7.16 0.97 0.93 0.86 0.79 0.73 0.67 0.62 0.57 0.53 0.50 0.47 0.45 0.43 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.35 0.34 0.34 0.33 0.33 0.33 0.33 0.33 0.33 0.33 -11.05 -21.35 -30.44 -38.16 -44.59 -49.93 -54.37 -58.10 -61.25 -63.96 -66.31 -68.37 -70.19 -71.83 -73.31 -74.66 -75.90 -77.05 -78.12 -79.13 -80.09 -80.99 -81.85 -82.68 -83.47 -84.23 -84.97 -85.68 -86.37 -87.05
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HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| VCE = 5V and IC = 10mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 0.72 0.67 0.60 0.53 0.47 0.42 0.37 0.34 0.31 0.29 0.27 0.25 0.24 0.22 0.21 0.20 0.20 0.19 0.18 0.18 0.17 0.17 0.16 0.16 0.16 0.15 0.15 0.15 0.15 0.14 -16.43 -31.26 -43.76 -54.00 -62.38 -69.35 -75.26 -80.36 -84.84 -88.83 -92.44 -95.73 -98.75 -101.55 -104.15 -106.57 -108.85 -110.98 -113.00 -114.90 -116.69 -118.39 -120.01 -121.54 -122.99 -124.37 -125.69 -126.94 -128.14 -129.27 15.12 13.90 12.39 10.92 9.62 8.53 7.62 6.86 6.22 5.69 5.23 4.83 4.49 4.19 3.93 3.70 3.49 3.30 3.13 2.98 2.84 2.72 2.60 2.49 2.39 2.30 2.22 2.14 2.06 1.99 165.22 152.04 141.18 132.57 125.78 120.37 116.00 112.39 109.36 106.77 104.51 102.53 100.75 99.16 97.70 96.36 95.12 93.96 92.87 91.85 90.87 89.94 89.06 88.21 87.39 86.60 85.83 85.09 84.36 83.66 1.27E-02 2.34E-02 3.13E-02 3.68E-02 4.05E-02 4.31E-02 4.49E-02 4.63E-02 4.72E-02 4.80E-02 4.86E-02 4.90E-02 4.94E-02 4.97E-02 4.99E-02 5.01E-02 5.03E-02 5.05E-02 5.06E-02 5.07E-02 5.08E-02 5.09E-02 5.10E-02 5.11E-02 5.12E-02 5.12E-02 5.13E-02 5.13E-02 5.14E-02 5.15E-02 75.41 62.89 52.58 44.50 38.23 33.34 29.47 26.37 23.84 21.75 20.00 18.52 17.25 16.15 15.19 14.34 13.60 12.94 12.34 11.81 11.33 10.89 10.50 10.13 9.80 9.49 9.21 8.95 8.71 8.49 0.95 0.88 0.79 0.70 0.63 0.57 0.51 0.47 0.44 0.41 0.39 0.37 0.35 0.34 0.33 0.32 0.31 0.31 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 -14.26 -26.95 -37.31 -45.45 -51.77 -56.72 -60.65 -63.85 -66.49 -68.71 -70.62 -72.28 -73.76 -75.08 -76.28 -77.38 -78.41 -79.37 -80.27 -81.13 -81.95 -82.74 -83.50 -84.24 -84.95 -85.64 -86.32 -86.98 -87.62 -88.25 (Continued) |S22| PHASE(S22)
PHASE(S12)
Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 0.72 0.68 0.62 0.57 0.52 -16.65 -32.12 -45.73 -57.39 -67.32 10.11 9.44 8.57 7.68 6.86 166.77 154.69 144.40 135.95 129.11 1.66E-02 3.10E-02 4.23E-02 5.05E-02 5.64E-02 77.18 65.94 56.39 48.66 42.52 0.96 0.90 0.82 0.74 0.67 -10.76 -20.38 -28.25 -34.31 -38.81
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HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.47 0.43 0.40 0.38 0.36 0.34 0.33 0.32 0.30 0.30 0.29 0.28 0.28 0.27 0.27 0.26 0.26 0.26 0.25 0.25 0.25 0.25 0.25 0.24 0.24 PHASE(S11) -75.83 -83.18 -89.60 -95.26 -100.29 -104.80 -108.86 -112.53 -115.86 -118.90 -121.69 -124.24 -126.59 -128.76 -130.77 -132.63 -134.35 -135.96 -137.46 -138.86 -140.17 -141.39 -142.54 -143.62 -144.64 |S21| 6.14 5.53 5.01 4.56 4.18 3.86 3.58 3.33 3.12 2.92 2.75 2.60 2.47 2.34 2.23 2.13 2.04 1.95 1.87 1.80 1.73 1.67 1.61 1.56 1.51 PHASE(S21) 123.55 118.98 115.17 111.94 109.17 106.76 104.63 102.72 101.01 99.44 98.01 96.68 95.44 94.29 93.19 92.16 91.18 90.24 89.34 88.48 87.65 86.85 86.07 85.31 84.58 |S12| 6.07E-02 6.37E-02 6.60E-02 6.77E-02 6.91E-02 7.01E-02 7.09E-02 7.16E-02 7.22E-02 7.27E-02 7.32E-02 7.35E-02 7.39E-02 7.42E-02 7.45E-02 7.47E-02 7.50E-02 7.52E-02 7.55E-02 7.57E-02 7.59E-02 7.61E-02 7.63E-02 7.65E-02 7.67E-02 (Continued) |S22| 0.61 0.55 0.51 0.47 0.44 0.41 0.39 0.37 0.36 0.34 0.33 0.32 0.31 0.30 0.30 0.29 0.28 0.28 0.28 0.27 0.27 0.26 0.26 0.26 0.26 PHASE(S22) -42.10 -44.47 -46.15 -47.33 -48.15 -48.69 -49.05 -49.26 -49.38 -49.43 -49.44 -49.43 -49.40 -49.38 -49.36 -49.35 -49.35 -49.38 -49.42 -49.49 -49.56 -49.67 -49.81 -49.96 -50.13
PHASE(S12) 37.66 33.79 30.67 28.14 26.06 24.33 22.89 21.67 20.64 19.76 19.00 18.35 17.79 17.30 16.88 16.52 16.20 15.92 15.68 15.48 15.30 15.15 15.01 14.90 14.81
VCE = -5V, IC = -10mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 0.58 0.53 0.48 0.43 0.40 0.37 0.35 0.33 0.32 0.31 0.30 0.30 -23.24 -44.07 -61.50 -75.73 -87.36 -96.94 -104.92 -111.64 -117.36 -122.27 -126.51 -130.21 13.03 11.75 10.25 8.88 7.72 6.78 6.01 5.39 4.87 4.44 4.07 3.76 163.45 149.11 137.78 129.12 122.49 117.33 113.22 109.85 107.05 104.66 102.59 100.76 1.43E-02 2.58E-02 3.38E-02 3.90E-02 4.25E-02 4.48E-02 4.64E-02 4.76E-02 4.85E-02 4.92E-02 4.97E-02 5.02E-02 73.38 60.43 50.16 42.49 36.81 32.59 29.39 26.94 25.04 23.55 22.37 21.44 0.93 0.85 0.74 0.65 0.58 0.51 0.47 0.43 0.40 0.37 0.35 0.33 -13.46 -24.76 -33.10 -38.83 -42.63 -45.07 -46.60 -47.49 -47.97 -48.18 -48.20 -48.11
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HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 m x 50 m Transistor
FREQ. (Hz) 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.29 0.29 0.28 0.28 0.28 0.28 0.27 0.27 0.27 0.27 0.27 0.27 0.27 0.26 0.26 0.26 0.26 0.26 PHASE(S11) -133.46 -136.33 -138.89 -141.17 -143.21 -145.06 -146.73 -148.26 -149.65 -150.92 -152.10 -153.18 -154.17 -155.10 -155.96 -156.76 -157.51 -158.21 |S21| 3.49 3.25 3.05 2.87 2.70 2.56 2.43 2.31 2.20 2.10 2.01 1.93 1.86 1.79 1.72 1.66 1.60 1.55 PHASE(S21) 99.14 97.67 96.33 95.10 93.96 92.90 91.90 90.95 90.05 89.20 88.37 87.59 86.82 86.09 85.38 84.68 84.01 83.35 |S12| 5.06E-02 5.09E-02 5.12E-02 5.15E-02 5.18E-02 5.21E-02 5.23E-02 5.26E-02 5.28E-02 5.30E-02 5.33E-02 5.35E-02 5.38E-02 5.40E-02 5.42E-02 5.45E-02 5.47E-02 5.50E-02 (Continued) |S22| 0.32 0.31 0.30 0.29 0.28 0.27 0.27 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.23 PHASE(S22) -47.95 -47.77 -47.58 -47.39 -47.23 -47.09 -46.98 -46.91 -46.87 -46.87 -46.90 -46.97 -47.07 -47.18 -47.34 -47.55 -47.76 -48.00
PHASE(S12) 20.70 20.11 19.65 19.29 19.01 18.80 18.65 18.55 18.49 18.46 18.47 18.50 18.55 18.62 18.71 18.80 18.91 19.03
Typical Performance Curves
25 COLLECTOR CURRENT (mA) IB = 200A IB = 160A IB =120A 100m 10m 20 COLLECTOR CURRENT AND BASE CURRENT (A) 1m 100 10 1 100n 10n 0 1n 0.5 VCE = 3V IC IB
15
10
IB = 80A IB = 40A
5
1 2 3 4 COLLECTOR TO EMITTER VOLTAGE (V)
5
0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V)
1.0
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE
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HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves
VCE = 3V GAIN BANDWIDTH PRODUCT (GHz)
(Continued)
10.0
8.0
160 140 DC CURRENT GAIN 120 100 80 60 40 20 0 1 10 100 1m 10m 100m
VCE = 5V
6.0
VCE = 1V
VCE = 3V
4.0
2.0
0 0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)
-25 COLLECTOR CURRENT (mA)
IB = -400A COLLECTOR CURRENT AND BASE CURRENT (A) IB = -320A IB = -240A
-100m -10m -1m -100 -10 -1 -100n -10n
VCE = -3V IC IB
-20
-15 IB = -160A -10 IB = -80A -5
0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE (V)
-1n -0.5
-0.6
-0.7
-0.8
-0.9
-1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE
5.0 GAIN BANDWIDTH PRODUCT (GHz)
VCE = -3V
VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0
160 140 DC CURRENT GAIN 120 100 80 60 40 20 0 -1 -10 -100 -1m -10m -100m
1.0 -0.1
-1.0
-10
-100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)
Die Characteristics
3-454
HFA3046, HFA3096, HFA3127, HFA3128
DIE DIMENSIONS: 53 mils x 52 mils x 19 mils 1340m x 1320m x 483m METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kA 0.8k A PASSIVATION: Type: Nitride Thickness: 4kA 0.5kA PROCESS: UHF-1 SUBSTRATE POTENTIAL: (POWERED UP) Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2 3 4 5 6 7
1
16
15 14 13 12 11
1340m (53mils)
8
9
10
1320m (52mils)
HFA3046
2 3 4 5 6 7
1
14
13 12
1340m (53mils)
11 10 8 9
1320m (52mils)
Pad numbers correspond to SOIC pinout. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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